JPH0156517B2 - - Google Patents
Info
- Publication number
- JPH0156517B2 JPH0156517B2 JP60015447A JP1544785A JPH0156517B2 JP H0156517 B2 JPH0156517 B2 JP H0156517B2 JP 60015447 A JP60015447 A JP 60015447A JP 1544785 A JP1544785 A JP 1544785A JP H0156517 B2 JPH0156517 B2 JP H0156517B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transparent
- transparent electrode
- dielectric layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 41
- 239000010408 film Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 241001175904 Labeo bata Species 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241000511976 Hoya Species 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60015447A JPS61176094A (ja) | 1985-01-31 | 1985-01-31 | エレクトロルミネセンス素子 |
US06/824,071 US4734618A (en) | 1985-01-31 | 1986-01-30 | Electroluminescent panel comprising a layer of silicon between a transparent electrode and a dielectric layer and a method of making the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60015447A JPS61176094A (ja) | 1985-01-31 | 1985-01-31 | エレクトロルミネセンス素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61176094A JPS61176094A (ja) | 1986-08-07 |
JPH0156517B2 true JPH0156517B2 (en]) | 1989-11-30 |
Family
ID=11889059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60015447A Granted JPS61176094A (ja) | 1985-01-31 | 1985-01-31 | エレクトロルミネセンス素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4734618A (en]) |
JP (1) | JPS61176094A (en]) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62113386A (ja) * | 1985-11-11 | 1987-05-25 | 新技術事業団 | 薄膜型el素子及びその製造方法 |
JPH0793196B2 (ja) * | 1987-03-25 | 1995-10-09 | 株式会社日立製作所 | El素子およびその製造法 |
US4888820A (en) * | 1988-12-06 | 1989-12-19 | Texas Instruments Incorporated | Stacked insulating film including yttrium oxide |
US5804918A (en) * | 1994-12-08 | 1998-09-08 | Nippondenso Co., Ltd. | Electroluminescent device having a light reflecting film only at locations corresponding to light emitting regions |
JP3672125B2 (ja) * | 1996-01-26 | 2005-07-13 | ソニー株式会社 | 光学的素子の製造方法 |
TW386609U (en) * | 1996-10-15 | 2000-04-01 | Koninkl Philips Electronics Nv | Electroluminescent illumination apparatus |
US7701130B2 (en) | 2001-08-24 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Luminous device with conductive film |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3274024A (en) * | 1962-11-16 | 1966-09-20 | Gen Telephone & Elect | Energy converter |
US3854070A (en) * | 1972-12-27 | 1974-12-10 | N Vlasenko | Electroluminescent device with variable emission |
US4188565A (en) * | 1977-09-16 | 1980-02-12 | Sharp Kabushiki Kaisha | Oxygen atom containing film for a thin-film electroluminescent element |
JPS5823191A (ja) * | 1981-07-31 | 1983-02-10 | シャープ株式会社 | 薄膜el素子 |
-
1985
- 1985-01-31 JP JP60015447A patent/JPS61176094A/ja active Granted
-
1986
- 1986-01-30 US US06/824,071 patent/US4734618A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS61176094A (ja) | 1986-08-07 |
US4734618A (en) | 1988-03-29 |
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